Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1981-05-13

1983-10-04

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 148 15, 148187, 148188, 148175, H01L 21265, H01L 21268

Patent

active

044070608

ABSTRACT:
Shallow uniform impurity diffusion regions in a semiconductor substrate can be formed through the steps of forming an insulating film having a window on the semiconductor substrate, forming a semiconductor layer on the insulating film and semiconductor substrate exposed at the window, and diffusing a specified impurity from this semiconductor layer into the semiconductor substrate with the melt of semiconductor layer by a high energy beam such as a laser.
Simultaneously, the melted semiconductor layer is recrystallized and is used as a contact electrode having a low resistance and extending from the impurity diffusion region. Diffusion of the impurity into the semiconductor layer, which is the impurity diffusion source, can be performed at the time of forming the semiconductor layer or after the formation of the semiconductor layer.

REFERENCES:
patent: 3420719 (1969-01-01), Potts
patent: 4046607 (1977-09-01), Inoue et al.
patent: 4124934 (1978-11-01), De Brebisson
patent: 4182024 (1980-01-01), Cometta
patent: 4210993 (1980-07-01), Sunami
patent: 4267011 (1981-05-01), Shibata et al.
patent: 4268950 (1981-05-01), Chatterjee et al.

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