Static information storage and retrieval – Floating gate – Particular biasing
Patent
1999-12-21
2000-12-05
Elms, Richard
Static information storage and retrieval
Floating gate
Particular biasing
36518522, 36518528, 36518529, G11C 1604
Patent
active
061575739
ABSTRACT:
A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.
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Ishii Tatsuya
Kubono Shooji
Miwa Hitoshi
Tsuchiya Osamu
Elms Richard
Hitachi , Ltd.
Hitachi ULSI Engineering Corp.
Nguyen Hien
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