Semiconductor memory device and method of controlling a threshol

Static information storage and retrieval – Floating gate – Particular biasing

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Details

36518521, 36518522, G11C 1610

Patent

active

061575712

ABSTRACT:
A semiconductor memory device includes a reference current generating circuit that generates a reference current corresponding to a threshold voltage of a memory cell. A current comparing circuit compares a current across the memory cell when data is written to the memory cell, with the reference current. A control circuit controls the writing operation in response to a result of the comparison.

REFERENCES:
patent: 4964079 (1990-10-01), Devin
patent: 5838612 (1998-11-01), Calligaro et al.
patent: 5978261 (1999-11-01), Tailliet

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