Initialization routine in an EEPROM

Details Initialization routine in an EEPROM Initialization routine in an EEPROM

1992-02-14

1993-10-26

Heckler, Thomas M.

Boots, shoes, and leggings

364DIG2, 36496576, G06F 922

Patent

active

052573800

ABSTRACT:
A read-only memory with electrical overwrite capability has several storage cells, whereby each storage cell has one address, on the basis of which the storage cell can be individually written and read. The memory could be a read-only memory which can be quickly and completely erased. The memory has contacts for connecting lines for address signals, data signals and control signals. The read-only memory has at least two storage areas that are capable of being separately written and read, possibly also separately erased, to which the storage cells are assigned, whereby the storage cells in those areas have identical addresses. In dependence upon one internal state variable, the storage cells of one of the storage areas can only be accessed for reading purposes.

REFERENCES:
patent: 4430704 (1984-02-01), Page et al.
Markowitz, "Nonvolatile Memories", Sep. 1989, Elektrotechnik, No. 6, pp. 95-104.
Grossman, "Revolutionary Advances in EEPROM Features", Electro, May, 1984, pp. 1-5.
Soja, "Single Chip MCU EEPROM Programming Using Bootstrap Techniques", Electronic Engineering, Oct. 1988, pp. 75-80.
Intel Advance Information, "1024k (128k.times.8) CMOS Flash Memory", No. 290010-010, 1988, pp. 1-24.

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