Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1988-06-17
1990-07-17
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307308, 3072964, 307443, H03K 500, H03K 301
Patent
active
049423207
ABSTRACT:
A transistor circuit of this invention comprises a first transistor for receiving a first bias at its base, resistor means connected to the collector of the first transistor and clamp means connected to the junction between the first transistor and the resistor means, and obtains an output from a terminal of the resistor on the opposite to its junction with the first transistor. When a noise current due to .alpha. rays develops in the first transistor and the output is lowered, the clamp means operates in such a manner that the current flows through the clamp means and prevents the change of the output. The transistor circuit of this invention is connected to a resistor or a transistor and operates as a constant current circuit for supplying a current to the resistor or the transistor so that the current flowing therethrough becomes constant. For example, it is used as a constant current source of an emitter follower to constitute a level shift circuit. It is disposed in a feedback part and used as a constant current source in a logic circuit comprising a logic part consisting of a differential transistor circuit and the feedback part for negatively feeding back the in-phase output of the differential transistor circuit.
REFERENCES:
patent: 4536665 (1985-08-01), Dayton
patent: 4755693 (1988-07-01), Suzuki et al.
patent: 4771191 (1988-09-01), Estrada
patent: 4791325 (1988-12-01), McGinn
patent: 4792706 (1988-12-01), Ovens et al.
patent: 4810900 (1989-03-01), Okabe
Itoh Hiroyuki
Kobayashi Tohru
Masaki Akira
Yamada Toshio
Hitachi , Ltd.
Miller Stanley D.
Roseen Richard
LandOfFree
Transistor circuit with improved .alpha. ray resistant propertie does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor circuit with improved .alpha. ray resistant propertie, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor circuit with improved .alpha. ray resistant propertie will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-96162