Fishing – trapping – and vermin destroying
Patent
1991-12-31
1992-12-08
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437187, 437194, 437231, 437982, 148DIG133, H01L 2144
Patent
active
051698013
ABSTRACT:
A method for fabricating a semiconductor device comprises the steps of forming an insulating layer by the CVD method on a main surface of a semiconductor substrate, fluidizing the insulating layer by heat treatment, unifying a thickness of the insulating layer, opening contact holes in desired points of the insulating layer, and forming conductor contacts for interconnection on the contact holes. The insulating layer is has a uniform thickness in any area on the semiconductor device, so that over-etching of the insulating layer in opening contact holes can be prevented, and the step coverage is well improved.
REFERENCES:
patent: 3825442 (1974-07-01), Moore
patent: 4355454 (1982-10-01), Tasch, Jr. et al.
patent: 4489481 (1984-12-01), Jones
patent: 4605470 (1986-08-01), Gwozdz et al.
patent: 4654113 (1987-03-01), Tuchiya et al.
patent: 4708770 (1987-11-01), Pasch
patent: 4741926 (1988-05-01), White et al.
patent: 4743564 (1988-05-01), Sato et al.
patent: 4753866 (1988-06-01), Welch et al.
patent: 4885262 (1989-12-01), Ting et al.
Silicon Processing for VLSI; Wolf and Tauber; 1986; vol. 1; pp. 185-191, pp. 423-437.
Process Considerations for Using Spin-on-Glass as a Planarizing Dielectric Film; Pai et al.; Jun. 1987, IEEE V-Mic Conf., pp. 364-370.
Hearn Brian E.
NEC Corporation
Trinh Michael
LandOfFree
Method for fabricating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-960864