Method of making isolation structure in semiconductor integrated

Details Method of making isolation structure in semiconductor integrated Method of making isolation structure in semiconductor integrated

Filed on

1992-10-02

Date issued

1993-10-26

Examiner

Hearn, Brian E.

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437 67, 437231, 437 63, 148DIG50, H01L 2176

Type

Patent

Status

active

Patent number

052565939

Description

ABSTRACT:
For making an isolation region on a semiconductor substrate without forming an unwanted bird beak, after forming an insulating film on the semiconductor substrate, the substate surface is covered with a resist mask. An LPD SiO.sub.2 film is deposited on the unmasked portion of the substrate surface, using a hydrofluoric acid solution containing silicon dioxide so as to be supersaturated. Thereafter, the mask is removed from the substrate surface. Further, after a groove is formed in the semiconductor substrate, it may be filled with the LPD SiO.sub.2 film to provide the isolation region in the substrate.

REFERENCES:
patent: 5192714 (1993-03-01), Suguro et al.

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