Method for in-situ doping of deposited silicon

Details Method for in-situ doping of deposited silicon Method for in-situ doping of deposited silicon

1991-05-08

1993-10-26

Chaudhuri, O.

Fishing, trapping, and vermin destroying

437 81, 437106, H01L 21469, H01L 21223

Patent

active

052565661

ABSTRACT:
A method for in-situ doping of deposited silicon is disclosed. The method utilizes low temperature of approximately 560.degree. C., low pressure of approximately 300 mTorr, and low phosphine to silane ratio of approximately 0.0008 to form phosphorus doped silicon. The method is manufacturable in an automated LPCVD reactor. It allows relatively uniform defect free silicon films of low resistivity and good conformality and step coverage to be deposited at sufficient deposition rates over large semiconductor wafer lots for high wafer throughput.

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patent: 5096856 (1992-03-01), Freeman
Wolf et l. "Silicon Processing for VLSI Era" pp. 264-265 (1986).
T. Tang, "In-Situ Doped Polysilicon Using Vapor Dopant for High Density DRAMs", Semiconductor Process and Design Center, Texas Instruments Incorporated, IEDM Tech. DIG., 39 (1989).
K. Sawada, et al., "Formation of Polysilicon Electrodes in Deep Trenches with Two-Step Continuous Deposition of In-Situ Doped and Undoped Poysilicon Films", Matsushita Elec. Ind. Co., Ltd., 3-15 Yagumo-nakamachi Moriguchi Oska 570, Japan, p. 4142 (date unknown).
A. Learn, et al., "Deposition and Electrical Properties of In-Situ Phosphorus-Doped Silicon Films Formed by Low-Pressure Chemical Vapor Deposition" J. Appl. Phys. vol. 61, No. 5, Mar. 1987.

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