Strained multiple quantum well semiconductor laser and a method

Coherent light generators – Particular active media – Semiconductor

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372 46, 257 18, 437129, H01S 319

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053393252

ABSTRACT:
A strained multiple quantum well semiconductor laser including a semiconductor substrate, a multiple quantum well active layer including a plurality quantum well layers and a plurality of barrier layers, and a multilayer structure including the above multiple quantum well active layer is provided. Each barrier layer is interposed between two of the multiple quantum well active layers. The multilayer structure is formed upon the semiconductor substrate. Herein, at least one of the plurality of barrier layers is thicker than the other barrier layers, thereby serving as a layer absorbing strain which is stored in the barrier layers due to a difference between the lattice constant of semiconductor substrate and the lattice constant each quantum well layer.

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Reithmaier et al., "Investigation of Critical Layer Thickness in Elastically Strained InGaAs/GaAlAs Quantum Wells by Photoluminescence and Transmission Electron Microscopy", Appl. Phys. Lett., vol. 54, No. 1, Jan. 2, 1989, pp. 48-50.
"Strain-compensated strained-layer superlattices for 1.5 .mu.m wavelength lasers" by B. I. Miller et al.; Appl. Phys. Lett.; May 6, 1991, pp. 1952-1954.
"High-Performance 1.5 .mu.m Wavelength InGaAs-InGaAsP Strained Quantum Well Lasers & Amplifiers"; by Peter Thijs et al.; IEEE Journal of Quantum Electronics; vol. 27, No. 6; Jun. 1991; pp. 1426-1439.
"Resonance Frequency, Damping, & Differential Gain in 1.5 .mu.m Multiple Quantum-Well Lasers"; M. D. Tatham et al.; IEEE Journal of Quantum Electronics, vol. 28, No. 2, Feb. 1992, pp. 408-414.
Seltzer et al., "Zero-Net-Strain Multiquantum Well Lasers," Electronics Letters, vol. 27, No. 14., pp. 1268-1270 (Jul. 4, 1991).
European Search Report for Corresponding Application No. 93112431.7, dated mailed Feb. 25, 1994.

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