Thin film photoelectromotive force element having multi-thin fil

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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357 2, 357 4, 357 30, H01L 31075

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049465147

ABSTRACT:
Improved pin type and Schottky time thin film photoelectromotive force elements which exhibit desired effects in short-circuit current (Isc), open-circuit voltage (Voc), fill factor (F.F.), photoelectric conversion efficiency and S/N ratio, characterized in that at least one of the n-type semiconductor layer and the p-type semiconductor layer is constituted with a non-single-crystal silicon semiconductor layer comprised of a plurality of stacked non-single-crystal silicon films of 100 .ANG. or less thickness containing 1 to 10 atomic % of hydrogen atoms.

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