Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-04-14
1999-06-01
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257622, 257417, 257394, 257467, 257414, 313325, H01L 2906, H01L 2984
Patent
active
059090480
ABSTRACT:
A native oxide film is formed on the surface of a silicon substrate. The native oxide film has at least island-shaped imperfect SiO.sub.2 regions not formed with a perfect SiO.sub.2 film. Before the native oxide film is formed, a mask layer having a necessary opening is formed over the silicon substrate, according to necessity. The silicon substrate is etched in a vapor phase via the imperfect SiO.sub.2 regions of the native oxide film to form a hollow under the native oxide film at least at a partial region thereof. An upper film is formed on the native oxide film to cover and close the imperfect SiO.sub.2 regions. In this manner, a minute hollow can be formed in the silicon substrate with good controllability.
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Fujitsu Limited
Guay John
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