Mask for projection system using charged particle beam

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430296, G03F 900

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active

057284920

ABSTRACT:
A mask is proposed which restrains thermal deformation caused by irradiation by a charged particle beam and thereby increases the accuracy of pattern projection. In order to do this, in this mask for projection system using a charged particle beam according to the present invention, which has a mask base plate which is made from a semiconductor material and which is formed with holes which allow passage of the charged particle beam, at least a specified region around the periphery of the through holes of the mask base plate is covered with a layer of diamond. It is desirable further to cover this diamond layer with a layer of an electroconductive material, in order to prevent static charging up upon it.

REFERENCES:
patent: 4448865 (1984-05-01), Bohlen et al.
patent: 5279925 (1994-01-01), Berger et al.
Windischmann et al., "Properties of Diamond Membranes for X-Ray Lithography", J. Appl. Phys. 68(11), Dec. 1990.
Nakayama et al., "Thermal Characteristics of Si Mask for EB Cell Projection Lithography", J. Appl. Phys. vol. 31 (1992) pp. 4268-4272, Part 1, No. 12B, Dec. 1992.
Sohda et al., "Cell Projection Lithography with Scattering Contrast", J. Appl. Phys., vol. 33 (1994) pp. 6940-6945.

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