Difunctional amino precursors for the deposition of films compri

Details Difunctional amino precursors for the deposition of films compri Difunctional amino precursors for the deposition of films compri

1997-08-21

1999-06-01

Nazario-Gonzalez, Porfirio

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

556 1, 556 51, 556 57, 556176, 534 15, C07F 900, C07F 700, C07F 1100

Patent

active

059089474

ABSTRACT:
Improved precursors for use in chemical vapor deposition of thin films of low-valent metals are provided, which are sterically saturated and protected from attack of the coreactant in the gas phase. Specific precursors have the formulae:

REFERENCES:
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4713258 (1987-12-01), Umemura
patent: 4721631 (1988-01-01), Endo et al.
patent: 4868005 (1989-09-01), Ehrlich et al.
patent: 4876112 (1989-10-01), Kaito et al.
patent: 4923717 (1990-05-01), Gladfelter et al.
patent: 5005519 (1991-04-01), Egermeier et al.
patent: 5022905 (1991-06-01), Grundy et al.
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5147819 (1992-09-01), Yu et al.
patent: 5173327 (1992-12-01), Sandhu et al.
patent: 5227334 (1993-07-01), Sandhu
patent: 5231056 (1993-07-01), Sandhu et al.
patent: 5240739 (1993-08-01), Doan et al.
patent: 5252518 (1993-10-01), Sandhu et al.
patent: 5254499 (1993-10-01), Sandhu et al.
patent: 5275715 (1994-01-01), Tuttle
patent: 5300321 (1994-04-01), Nakano et al.
patent: 5314727 (1994-05-01), McCormick et al.
patent: 5344792 (1994-09-01), Sandhu et al.
patent: 5348587 (1994-09-01), Eichman et al.
patent: 5376405 (1994-12-01), Doan et al.
patent: 5377429 (1995-01-01), Sandhu et al.
patent: 5378501 (1995-01-01), Foster et al.
patent: 5393564 (1995-02-01), Westmoreland et al.
patent: 5464656 (1995-11-01), Verkade
patent: 5591483 (1997-01-01), Winter et al.
patent: 5603988 (1997-02-01), Shapiro et al.
patent: 5607722 (1997-03-01), Vaartstra et al.
patent: 5659057 (1997-08-01), Vaartstra
Storr et al., Canadian Journal of Chemistry, vol. 48, pp. 3667-3672, 1970.
Drake, S.R., et al., "Titanium Amide Molecular Precursors for Titanium Nitride", Polyhedron, 13(2), pp. 181-186, (Jan. 1994).
Fix, et al., "Chemistry of Materials",Chemical Vapor Deposition of Vanadium, Niobium, and Tantalum Nitride Thin films, pp. 614-619, (May 1993).
Herman, I., "Laser-Assisted Deposition of Thin films from Gas-Phase and Surface-Adsorbed Molecules", Chem. Rev., 89 , 1323, 1346-1349, (1989).
Hoffman, D.M., "Polyheron: vol. 13 No. 8", Chemical Vapour Deposition of Nitride Thin Films, Department of Chemistry, University of Houston, TX, pp. 1160 -1179, (1994).
Liao, J.H., et al., "Experimental and Simulation Studies of Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride From Tetrakis-Dimethylaminotitanium and Ammonia", Advanced Metallization for ULSI Applications in 1994 : Conf. Proceedings, Materials Research Society, pp. 231-237, (1994).
Morosanu, C., Thin Films by Chemical Vapor Deposition, Elsevier, N.Y., 42-54 & 460-475, (1990).
Murarka, S., Metallization: Theory and Practice for VLSI and ULSI, 1-3, (1993).
Sandhu, G., et al., "Metalorganic Chemical Vapor Deposition of TiN Films for Advanced Metallization", (Nov. 1992).
Sinitsyna, V.I., et al., "Polymorphic Coordination Compounds formed by Niobium Oxide Chloride with Tertiary Aliphatic Amines",Inorganic Materials, 5, 514-516, (1969).
Sun, X., et al., "Ti-Si-N Diffusion Barriers for Al & Cu Metallizations", California Institute of Technology.
Toth, L.E., "Transition Metal Carbides and Nitrides", J.L. Margrave, ed., vol. 7, Academic Press, NY (1971) , Entire Book.
Travis, et al., "A Scalable Submicron Contact Technology Using Conformal LPCVD TiN", IEDM Technical Digest, pp. 47-49, ( (1990) ).

Affiliated with

Also associated with

Rating

Difunctional amino precursors for the deposition of films compri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Difunctional amino precursors for the deposition of films compri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Difunctional amino precursors for the deposition of films compri will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-955789