Method of fabricating a mis-type device by using a gate electrod

Details Method of fabricating a mis-type device by using a gate electrod Method of fabricating a mis-type device by using a gate electrod

1980-08-01

1982-10-26

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 148187, 357 52, 357 91, H01L 2122, H01L 21265

Patent

active

043560415

ABSTRACT:
The invention relates to a method of fabricating a semiconductor device and is characterized by the steps of selectively forming a polycrystalline silicon layer for a gate electrode on a semiconductor substrate, forming selectively a nitride film by ion implantation into the surface of the substrate, on which the silicon layer is not formed, and thereafter oxidizing the surface of the silicon layer using the nitride film as a mask thereby to form an oxidation film on the silicon layer.

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patent: 4105805 (1978-08-01), Glendinning et al.
patent: 4113515 (1978-09-01), Kooi et al.
patent: 4170492 (1979-10-01), Bartlett et al.
patent: 4170500 (1979-10-01), Crossley
patent: 4257832 (1981-03-01), Schwabe et al.
patent: 4266985 (1981-05-01), Ito et al.
patent: 4272308 (1981-06-01), Varshney

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