Semiconductor memory device having a voltage converting circuit

Details Semiconductor memory device having a voltage converting circuit Semiconductor memory device having a voltage converting circuit

1997-03-21

2000-02-01

Nelms, David

Static information storage and retrieval

Powering

365229, 36518909, G11C 700

Patent

active

06021080&

ABSTRACT:
The voltage reducing circuit 40 comprises driver circuits 21 to 24 corresponding to the memory cell arrays 11 to 14, and only one control circuit 20. Each of the driver circuit changes an external power source voltage VEXT into the internal power source voltage INTS and supplies the internal power source voltage INTS to one corresponding memory cell array according to a control signal C1. The control circuit commonly receives the internal power source voltage INTS and generates the control signal in response to the level of the internal power source voltage. The control signal is commonly provided to the driver circuits.

REFERENCES:
patent: 5463588 (1995-10-01), Chonan
patent: 5598363 (1997-01-01), Uchida
patent: 5619472 (1997-04-01), Okamura
patent: 5631547 (1997-05-01), Fujioka et al.

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