Nonvolatile semiconductor memory with read circuit using flip-fl

Details Nonvolatile semiconductor memory with read circuit using flip-fl Nonvolatile semiconductor memory with read circuit using flip-fl

1999-01-28

2000-02-01

Hoang, Huan

Static information storage and retrieval

Floating gate

Particular biasing

3651852, 36518525, 365203, C11C 1134

Patent

active

060210680

ABSTRACT:
A nonvolatile semiconductor memory of this invention includes a data storage read cell in which the threshold is set to turn on/off the read cell in accordance with storage data upon selection, a reference cell in which the threshold is set to turn on the reference cell upon selection, and a flip-flop type amplifier for reading out whether the read cell is an ON or OFF cell. In this nonvolatile semiconductor memory, whether the read cell is an ON or OFF cell is read out by comparing changes in bit line voltages of the read and reference cells using the flip-flop type sense amplifier by a method of performing precharge and then discharge. At this time, a word line connected to the read cell is set to a selected state in synchronism with the start of precharge, and a word line connected to the reference cell is set to a selected state in synchronism with the end of precharge.

REFERENCES:
patent: 5270978 (1993-12-01), Matsumoto et al.
patent: 5473570 (1995-12-01), Sato et al.
patent: 5757697 (1998-05-01), Briner
patent: 5936888 (1999-08-01), Sugawara

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