Patent
1987-12-24
1991-05-07
James, Andrew J.
357 14, 357 20, 357 234, 357 41, 357 51, H01L 2968, H01L 2910, H01L 2702
Patent
active
050140973
ABSTRACT:
An EEPROM constructed in accordance with our invention includes a voltage multiplier for generating an erase voltage and a voltage regulator circuit for controlling the magnitude of the erase voltage. The voltage regulator circuit includes a capacitive voltage divider for providing a first voltage proportional to the erase voltage, a reference voltage lead for providing a reference voltage and a control circuit for controlling the voltage multipler circuit so that if the first voltage is less than the reference voltage, the voltage multiplier circuit will increase the erase voltage, but if the first voltage is greater than the reference voltage, the voltage multiplier will not continue to increase the erase voltage. The voltage multiplier includes novel capacitors and transistors constructed using standard EEPROM processing to withstand high voltages without breaking down.
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John R. Dickson, "On-Chip High-Voltage Generation in MNOS Integrated Circuits Using an Improved Voltage Multiplier Technique", IEEE Journal of Solid-State Circuits, vol. SC-11, No. 3, (Jun. 1976), pp. 374-378.
Ali Syed
Eitan Boaz
Kazerounian Reza
James Andrew J.
Ngo Ngan Van
Waferscale Integration Inc.
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