Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-08-01

1991-01-08

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 372 96, H01S 319, H01S 308

Patent

active

049842439

ABSTRACT:
A semiconductor laser includes a groove in a GaAs first current blocking layer, which extends to an Al.sub.x Ga.sub.(1-x) As second clad layer beneath the first blocking layer. The width of the groove periodically changes along the length of the resonator. Over the regions of the first current blocking layer where the groove has a smaller width, a Al.sub.z Ga.sub.(1-z) As second current blocking grating layer is formed. An Al.sub.x Ga.sub.(1-x) As third current blocking layer is disposed on the second current blocking layer and the portions of the first current blocking layer not covered by the second current blocking layer. The variation of the width of the groove is achieved by selective etching in gaseous hydrogen chloride by irradiation with an arsenic molecular beam, or by selective dissolution in a liquid-phase solvent but not the second current blocking layer.

REFERENCES:
patent: 4761791 (1988-08-01), Stegmuller
patent: 4782035 (1988-11-01), Fujiwara
patent: 4829023 (1989-05-01), Nagai et al.
patent: 4837775 (1989-06-01), Andrews et al.
patent: 4845014 (1989-07-01), Ladany
Yi Luo et al., Fabrication and Characteristics of a Gain-Coupled Distributed-Feedback Laser Diode, 1988, pp. 327, 330.
S. Takigawa, Continuous Room-Temperature Operation of a 759-nm GaAlAs Distributed Feedback Laser, Nov., 1987, pp. 1580-5181.

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