Method for making termination structure for power MOSFET

Details Method for making termination structure for power MOSFET Method for making termination structure for power MOSFET

1995-04-17

1997-01-28

Thomas, Tom

Fishing, trapping, and vermin destroying

437 40, 437 41, 437 52, H01L 2144

Patent

active

055977650

ABSTRACT:
A termination structure (located along a transistor perimeter or a die edge) for a trenched MOSFET or other semiconductor device prevents the undesirable surface channelling phenomena without the need for any additional masking steps to form a channel stop. This structure is especially applicable to P-channel MOSFETs. In the prior art a mask defines a doped channel stop. Instead here, a blanket ion implantation of P-type ions is performed after the active area masking process. Thus this doped channel stop termination is in effect masked during fabrication by the field oxide. In another version the channel stop termination is an additional trench formed in the termination region of the MOSFET. The trench is conventionally lined with oxide and filled with a conductive polysilicon field plate which extends to the edge of the die. In another version, the doped and trenched channel stops are used in combination. The channel stops are enhanced by provision of field plates overlying them on the die surface.

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