Method of fabricating a semiconductor integrated circuit device

Details Method of fabricating a semiconductor integrated circuit device Method of fabricating a semiconductor integrated circuit device

1995-10-06

1997-01-28

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437919, 437918, H01L 2170, H01L 2700

Patent

active

055977596

ABSTRACT:
A semiconductor integrated circuit device includes a capacitor and a resistor in addition to a transistor. The capacitor includes a lower electrode made of a first polysilicon layer formed on an insulating layer covering the main surface of a semiconductor substrate, a dielectric film formed on the lower electrode and a upper electrode formed on the dielectric layer, whereas the resistor includes a resistor layer made of a second polysilicon layer formed on the insulating film. The first polysilicon layer has the same sheet resistance as the second polysilicon layer.

REFERENCES:
patent: 4367580 (1983-01-01), Guterman
patent: 4419812 (1983-12-01), Topich
patent: 4929989 (1990-05-01), Hayano
patent: 5330928 (1994-07-01), Tseng
patent: 5356826 (1994-10-01), Natsume

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor integrated circuit device , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-941227