Method of manufacturing a semiconductor device including bipolar

Details Method of manufacturing a semiconductor device including bipolar Method of manufacturing a semiconductor device including bipolar

1995-07-18

1997-01-28

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 31, 148DIG9, H01L 2170, H01L 2700

Patent

active

055977570

ABSTRACT:
An npn bipolar transistor and a p-channel MOS transistor are formed on a p-type silicon substrate. The outer base electrode of the npn bipolar transistor and the gate electrode of the p-channel MOS transistor contain a p-type impurity and are composed of films consisting of the same material. The inner and outer bases are formed in a surface region of the p-type silicon substrate. The outer base is connected to the outer base electrode. The emitter electrode of the npn bipolar transistor is formed on the inner base. A laminated film constituted by a silicon oxide film and a silicon nitride film is formed on a p-type silicon substrate at a position between the outer base electrode and the emitter electrode.

REFERENCES:
patent: 4885259 (1989-12-01), Osinski et al.
patent: 5227654 (1993-07-01), Momose et al.
patent: 5238850 (1993-08-01), Matsunaga et al.

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