Method of making nonvolatile memory cell with crystallized float

Details Method of making nonvolatile memory cell with crystallized float Method of making nonvolatile memory cell with crystallized float

1995-05-22

1997-01-28

Niebling, John

Fishing, trapping, and vermin destroying

437101, 437233, 437247, H01L 218247

Patent

active

055977499

ABSTRACT:
The nonvolatile memory cell of this invention includes a floating gate formed of an ultra-thin polycrystalline silicon film. Since the memory cell includes such an ultra-thin floating gate with a smooth surface, problems occurring in the patterning for the floating gate in conventional memory cells can be solved. In addition, the memory cells of the invention are suitable for device integration. Especially when the floating gate is formed of a polycrystalline silicon film, the device characteristics such as writing speed are remarkably improved.

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