Method for forming isolated CMOS structures on SOI structures

Details Method for forming isolated CMOS structures on SOI structures Method for forming isolated CMOS structures on SOI structures

1995-03-06

1997-01-28

Niebling, John

Fishing, trapping, and vermin destroying

437 46, 437 47, 437 57, 437 69, 437 71, 437 62, 437101, 437187, 437239, 148DIG150, 148DIG152, H01L 21265

Patent

active

055977383

ABSTRACT:
A method for fabricating a single crystal silicon on insulator material by forming oxidized layers underneath epi islands without damaging the surface quality of the silicon. In an illustrative embodiment, an epitaxial layer of p-type silicon is grown on a substrate of n-type silicon. A plurality of islands are defined from the epitaxial layer. A semiconductor device is fabricated from one of the p-islands by electrochemically anodizing a region of the substrate beneath that p-island, which p-island can be used to fabricate a selected semiconductor device. If n-type material is required for device fabrication, a device layer of n-type silicon can be grown on the surface of a p-islands and that p-island can be anodized and oxidized to form the insulating layer between the device layer and substrate. In this manner, MOS transistors and other devices may be fabricated for operation at temperatures of up to 500.degree. C.

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"Very Thin Silicon-on-Insulator Devices for CMOS at 500.degree. C.", by John B. McKitterick, pp. 37-41, Jul. 1993.

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