Buried disordering sources in semiconductor structures employing

Details Buried disordering sources in semiconductor structures employing Buried disordering sources in semiconductor structures employing

1989-03-24

1991-05-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG15, 148DIG72, 148DIG94, 148DIG95, 437 26, 437110, 437133, 437160, 437935, 437987, H01L 2120

Patent

active

050136844

ABSTRACT:
In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form patterned buried impurity layers in semiconductor devices, such as heterostructure lasers and array lasers, which function as buried impurity induced layer disordering (BIILD) sources upon subsequent annealing. These layers may be formed to either function as buried impurity induced layer disordering (BIILD) sources or function as a reverse bias junction configuration of confining current to the active region of a laser structure. Their discussion here is limited to the first mentioned function.

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