Solid-state image sensor

Details Solid-state image sensor Solid-state image sensor

1988-03-21

1991-01-08

Wojciechowicz, Edward J.

357 24, H01L 2714

Patent

active

049840479

ABSTRACT:
A solid-state image sensor is disclosed which comprises a pn photodiode formed in a P-type substrate. A charge-coupled device is disposed adjacent the photodiode for receiving signal carriers from the diode. A lateral-overflow drain is disposed adjacent the photodiode for receiving carriers from the photodiode. In order to provide a simplified image sensor, a virtual gate is formed between the photodiode and the drain to effect the flow of excess carriers from the photodiode.

REFERENCES:
patent: 4373167 (1983-02-01), Yamada
patent: 4460912 (1984-07-01), Takeshita et al.
patent: 4611223 (1986-09-01), Hine et al.
patent: 4626915 (1986-12-01), Takatsu
patent: 4688098 (1987-08-01), Kon et al.

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