Silicon carbide semiconductor device with ohmic electrode consis

Details Silicon carbide semiconductor device with ohmic electrode consis Silicon carbide semiconductor device with ohmic electrode consis

1990-10-17

1992-06-23

Jackson, Jr., Jerome

357 232, 357 61, H01L 2348, H01L 2946, H01L 2920, H01L 2922

Patent

active

051247798

ABSTRACT:
A silicon carbide semiconductor device is disclosed which includes a silicon carbide single-crystal layer and at least one ohmic electrode in contact with the silicon carbide single-crystal layer, wherein the ohmic electrode is made of a titanium-aluminum alloy. Also disclosed is a method of producing the silicon carbide semiconductor device.

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Japanese Journal of Applied Physics, vol. 25, No. 7, Jul. 1986, pp. L592-L594.
W. V. Muench et al., "Breakdown Field in Vapor-Grown Silicon Carbide Junctions", Journal of Applied Physics, vol. 48, 11, Nov. 1977, pp. 4831-4833.

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