High speed switch matrix

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307242, 307241, 328104, 328105, 328137, 328152, 328153, H03K 17687, H03K 1756

Patent

active

049838652

ABSTRACT:
A switch matrix for particular use in microwave monolithic integrated circuits has FET-based switch elements with at least a combined total of two gates. Embodiments include the use of single and dual gate FETs. A preferred embodiment includes cascode-coupled FETs in series with inductances between input and output terminals. The input is taken from an artificial transmission line formed of a plurality of series-coupled inductors or from the junctions of series-coupled pairs of mutually coupled inductors.

REFERENCES:
patent: 3598908 (1971-08-01), Poulett
patent: 3665320 (1972-05-01), Ohsawa et al.
patent: 4291278 (1981-09-01), Quine
patent: 4511813 (1985-04-01), Pan
patent: 4580114 (1986-04-01), Upadhyayula
patent: 4808938 (1989-02-01), Levinson

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