Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1980-11-25
1983-06-28
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330311, H03F 316
Patent
active
043908519
ABSTRACT:
A monolithic microwave amplifier fabricated on a GaAs substrate utilizes MESFETs to provide both gain and impedance matching. The source of a first MESFET is connected to an input terminal of the amplifier and its drain is connected to an interstage matching network. The gate of a second MESFET is connected to the output of the interstage matching network and its source is connected to the output terminal of the amplifier. Suitable voltages are applied to the MESFETs to bias the devices appropriately. The gate of the first MESFET and the drain of the second MESFET are connected in common with the grounds of the amplifier's input and output ports. In a second embodiment, additional gain is obtained by providing a third MESFET with a common source connection between the first and second MESFETs.
REFERENCES:
Decker et al., "A Monolithic GaAs I.F. Amplifier for Integrated Receiver Applications," 1980 MTT-S International Microwave Symposium Digest, May 1980.
Gupta Aditya K.
Higgins J. Aiden
Hamann H. Fredrick
Malin Craig O.
Mullins James B.
Rockwell International Corporation
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