Semiconductor driver circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307270, 307571, H03K 17687, H03K 301

Patent

active

043908039

ABSTRACT:
Disclosed is a semiconductor driver circuit which includes first and second switching MOS transistors, a series circuit of first and second MOS transistors connected between the first switching MOS transistor and a power supply terminal, a third MOS transistor connected between the second switching MOS transistor and the power supply terminal, a load capacitor adapted to be connected between the drain and source of the second MOS switching transistor, and a capacitor circuit connected between the gate and source of the third MOS transistor. The capacitor circuit includes first and second capacitors connected in series with each other, and the junction of the first and second capacitors is coupled to the drain of the first switching MOS transistor. This driver circuit further includes a third switching MOS transistor whose gate is connected with the gates of the first and second switching MOS transistors, whose source is connected with the drain of the first switching MOS transistor, and whose drain is connected with the gates of the second and third MOS transistors, and a fourth MOS transistor whose source is connected with the drain of the third switching MOS transistor and whose drain and gate are coupled to the power supply terminal.

REFERENCES:
patent: 3946245 (1976-03-01), McClaughry
patent: 4048632 (1977-09-01), Spence
patent: 4284905 (1981-08-01), Rosenweig

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