Bias-voltage generator

Details Bias-voltage generator Bias-voltage generator

1980-11-19

1983-06-28

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307297, 307304, 307471, 331108C, H03K 301, H03K 3353

Patent

active

043907989

ABSTRACT:
A substrate bias-voltage generator is comprised of an oscillator, and a charge pumping circuit, driven by the oscillator via a coupling capacitor, which transfers accumulated electric charges, out of the semiconductor substrate. The oscillator frequency is varied in accordance with the variation of the voltage level of the semiconductor substrate, preferably by means of an RC circuit, fabricated by a MOSFET variable resistance (R) and a capacitor (C), within a ring oscillator or a multi-vibrator. The gate electrode of the MOSFET variable resistance is directly connected to the semiconductor substrate.

REFERENCES:
patent: 3806741 (1974-04-01), Smith
patent: 4115710 (1978-09-01), Lou
patent: 4142114 (1979-02-01), Green
patent: 4266151 (1981-05-01), Hoffman et al.

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