Process for producing a semiconductor article

Details Process for producing a semiconductor article Process for producing a semiconductor article

1990-04-13

1991-01-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 83, 437 89, 437915, H01L 2120

Patent

active

049835394

ABSTRACT:
A process for producing a semiconductor article comprises applying crystal formation treatment to a substrate having a free surface on which a nonnucleation surface exhibiting a smaller nucleation density and a nucleation surface of an amorphous material exhibiting a larger nucleation density and having a sufficiently minute area so as to allow only a single nucleus to be formed thereon are disposed next to each other whereby a semiconductor monocrystal is permitted to grow from the nucleus, the production conditions during said crystal formation treatment being varied to form semiconductor crystal regions different in their characteristics within at least part of said semiconductor monocrystal.

REFERENCES:
patent: 3171761 (1965-03-01), Marinace
patent: 3184350 (1965-05-01), Marinace
patent: 3574008 (1971-04-01), Rice
patent: 3793712 (1974-02-01), Bean et al.
patent: 3850707 (1974-11-01), Bestland
patent: 3855690 (1974-12-01), Kim et al.
patent: 3884733 (1975-05-01), Bean
patent: 4064954 (1977-01-01), Tshudy et al.
patent: 4178197 (1979-12-01), Marinace
patent: 4239788 (1980-12-01), Beck
patent: 4530149 (1985-07-01), Jastrzebaski et al.
patent: 4637127 (1987-01-01), Kurogi et al.
patent: 4698316 (1987-10-01), Corboy, Jr. et al.
patent: 4749441 (1988-06-01), Christenson et al.
IDEM 1982, Technical Digest, International Electron Devices Meeting, San Francisco, CA, pp. 798-800, G. H. Olsen et al.,: "Non-Planar VPE Growth of Low-threshold (60mA) current 1.3 mum CW lasers".
British Journal of Applied Physics, vol. 18, No. 10, Oct. 1967, pp. 1357-1382, GB; J. D. Filby et al.: "Single-Crystal Films of Silicon on Insulators".

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