Method of making a buried oxide field isolation structure

Details Method of making a buried oxide field isolation structure Method of making a buried oxide field isolation structure

1989-11-24

1991-01-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 70, 437 72, H01L 2176

Patent

active

049835378

ABSTRACT:
Improved buried oxide (BOX) field isolation in a silicon structure which has a trench with a curved side wall is achieved by employing reactive ion etching or local oxidation of silicon to produce the curved side wall. Electric field enhancement which normally occurs at sharp corners in silicon structures employing conventional buried oxide field isolation is minimized by the curved side wall. The buried oxide field isolation in the silicon structure is provided by chemical vapor deposited SiO.sub.2 atop thermally produced SiO.sub.2 in the field region.

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patent: 4743566 (1988-05-01), Bastiaens et al.
patent: 4942449 (1990-07-01), Wei et al.

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