Semiconductor laser

Details Semiconductor laser Semiconductor laser

1986-01-08

1988-06-21

Wan, Gene

Coherent light generators

Particular active media

Semiconductor

372 44, 372 45, 372 96, 357 4, 357 16, H01S 319, H01S 308, H01L 2712, H01L 4500

Patent

active

047529334

ABSTRACT:
A semiconductor laser which has a super lattice layer between a substrate and a light confinement layer, and in which a portion of the super lattice layer other than a portion corresponding to the radiation region of an active layer is disordered to block the electric current. The disordering is effected in a self-aligned manner to simplify the manufacturing process. Therefore, and element which oscillates and maintains a fundamental transverse mode is obtained with a good yield.

REFERENCES:
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4594603 (1986-06-01), Holonyak, Jr.
Semura et al. "AlGaAs/GaAs Multiquantum Well Lasers with Buried Multiquantum Well Optical Guide" Japanese Journal of Applied Physics, vol. 24, No. 7, Jul., 1985, pp. L548-L550.

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