Structure for inhibiting dopant out-diffusion

Details Structure for inhibiting dopant out-diffusion Structure for inhibiting dopant out-diffusion

1988-07-25

1989-05-09

James, Andrew J.

357 54, 357 67, 357 59, H01L 2348

Patent

active

048293636

ABSTRACT:
A method for inhibiting out-diffusion of dopants from polycrystalline or single crystal silicon substrates of high speed semiconductor devices into metal silicide conductive layers disposed on the substrate comprises interposing a refractory metal nitride layer between the doped silicon substrate and the refractory metal silicide conductive layer. Dopant out-diffusion is further retarded, and contact resistance lowered, by adding a thin layer of refractory metal between the refractory metal nitride layer and the silicon substrate.

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