Apparatus with field effect transistor having reduced channel le

Details Apparatus with field effect transistor having reduced channel le Apparatus with field effect transistor having reduced channel le

1987-06-09

1989-05-09

Munson, Gene M.

357 4, 357 234, 357 237, 357 45, 350334, H01L 2702, H01L 2978, H01L 4902, G02F 1133

Patent

active

048293580

ABSTRACT:
Apparatus is provided with at least a FET. The FET is formed of a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a insulating layer extending on the side surface of the second semiconductor layer and a conductive layer extending on the insulating layer in opposing relation to the side surface of the second semiconductor layer. In this case, the first, second and third semiconductor layers are formed of a non-single crystal semiconductor doped with a dangling bond neutralizer. The first and third semiconductor layers have the same conductivity type. The second semiconductor layer has a higher resistivity than the first and third semiconductor layers. The first and third semiconductor layers serve as either one of the drain and source and the other of them, respectively. The second semiconductor layer serves as channel region. The insulating layer and the conductive layer serve as gate insulating layer and gate electrode, respectively.

REFERENCES:
patent: 3893155 (1975-07-01), Ogiue
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patent: 4409724 (1983-10-01), Tasch et al.
patent: 4431271 (1984-02-01), Okubo
patent: 4470060 (1984-09-01), Yamazaki
Drangeid, "High-Speed Field-Effect Structure", IBM Technical Disclosure Bulletin, vol. 11(8/68), pp. 332-333.
Le Comber et al., "Amorphous-Silicon Field-Effect Device . . . ", El ectronics Letters, vol. 15(15 Mar., 1979), pp. 179-181.
Hayama et al., "Amorphous-Silicon Thin-Film Metal-Oxide Semiconductor Transistors", Appl. Phys. Lett., vol. 39(1 May 1980), pp. 754-755.

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