Signal mixer including resistive and normal gate field-effect tr

Details Signal mixer including resistive and normal gate field-effect tr Signal mixer including resistive and normal gate field-effect tr

1977-06-08

1979-03-06

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 41, 357 51, 357 59, 307220C, 328 15, 328 16, 328159, H01L 2978

Patent

active

041433874

ABSTRACT:
A mixer comprises a MOS transistor having an ideal quadratic characteristic. The transistor is of the D-MOST type and comprises a resistive gate across which a voltage drop is applied transversely to the longitudinal direction of the channel. The adjustment point of the transistor is chosen to be so that the range of the gate voltages between the threshold voltage and the voltage at which the slope reaches the saturation value is always situated during operation within the voltage drop across the gate electrode. The signals to be mixed are introduced capacitively via a second gate electrode situated above the resistive gate electrode and capacitively coupled therewith.

REFERENCES:
patent: 3090923 (1963-05-01), Wolff
patent: 3700976 (1972-10-01), Dill
patent: 3714522 (1973-01-01), Komiya et al.
patent: 3719864 (1973-03-01), Taniguchi et al.
patent: 3728695 (1973-04-01), Frohman-Bentchkowsky
patent: 3745425 (1973-07-01), Beale et al.
patent: 3999210 (1976-12-01), Yamada
patent: 4001860 (1977-01-01), Cauge et al.
patent: 4058771 (1977-11-01), Ohsawa et al.
C. Hu et al., "A Resistive-Gated IGFET Tetrode," IEEE Trans, on Elec. Dev., vol. ED-18, #7, Jul. 1971, pp. 418-425.

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