Repeated velocity overshoot semiconductor device

Details Repeated velocity overshoot semiconductor device Repeated velocity overshoot semiconductor device

1986-02-12

1988-01-12

Munson, Gene M.

357 16, 357 88, H01L 4500, H01L 29205

Patent

active

047194960

ABSTRACT:
Semiconductor structures suitable for repeated velocity overshoot are described. The structure comprises at least two velocity overshoot sections with each section comprising a first semiconductor region having a rapid change in potential and a dimension such that the carrier transit time is comparable to or shorter than the mean scattering time and a second semiconductor region having a more gradual change in potential and a dimension such that the carrier transit time is sufficient to allow the energy relaxation time to be exceeded.

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L. F. Eastman, "The Limits of Electron Ballistic Motion in Compound Semiconductor Transistors," The International Symposium on Gallium Arsenide and Related Compounds, Japan, 1981, pp. 245-250.

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