Method to reduce the reflectivity of a semi-conductor metallic s

Details Method to reduce the reflectivity of a semi-conductor metallic s Method to reduce the reflectivity of a semi-conductor metallic s

1991-07-31

1992-11-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437977, 148DIG138, H01L 21268

Patent

active

051660938

ABSTRACT:
A process for layering a low reflectivity metal layer on a semiconductor wafer for decreasing the optical reflectivity and increasing the optical absorptivity of the metal layer for laser processing. The process includes: depositing a metal layer, such as aluminum, over a substrate, roughening the surface of the metal layer by chemical mechanical planarization (CMP) while injecting a silicon oxide slurry over the surface and then laser processing the metal. The roughened metal surface has an increased surface area and irregular surface features that help absorb incident laser radiation with less reflectance.

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W. L. C. M. Heyboer et al., "Chemomechanical Si Polishing", Solid-State Science and Technology, J. Electrochem. Soc., vol. 138, No. 3, Mar. 1991, p. 774.
C. Yu et al., "Submicron Al Plug Process Utilizing High Temperature Sputtering and Chemical Mechanical Polishing", Conference Proceedings ULSI-VII, Material Research Soc., 1992.
G. H. Schwuttke et al., "New Gettering Process Using Laser-Induced Damage Plus Internal Oxygen Precipitation," IBM Tech. Disc. Bull., vol. 26, No. 1, Jun. 1983, p. 245.

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