Semiconductor memory device capable of low-voltage programming

Details Semiconductor memory device capable of low-voltage programming Semiconductor memory device capable of low-voltage programming

1994-02-25

1996-03-26

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

365104, 257317, 257321, H01L 2968

Patent

active

055026680

ABSTRACT:
A poly-silicon or amorphous silicon plate having cone-like protrusions is provided on a Si substrate in a tunnel window area such that the edges of the protrusions are placed very close to a floating gate. Alternatively, the top surface of a Si substrate is shaped into protrusions.

REFERENCES:
patent: 5017979 (1991-05-01), Fujii et al.
patent: 5063423 (1991-11-01), Fujii et al.

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