Positive-working photoresist elements containing anti-reflective

Details Positive-working photoresist elements containing anti-reflective Positive-working photoresist elements containing anti-reflective

1986-07-29

1988-01-12

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

430191, 430192, 430270, 430271, 430510, 430512, G03C 160, G03C 184

Patent

active

047191660

ABSTRACT:
Positive-working photoresist elements are protected against reflection of activating radiation from the substrate by incorporation of certain butadienyl dyes in a photoresist layer, an anti-reflective layer or a planarizing layer. These dyes have superior resistance to thermal degradation or volatilization at temperatures of as high as 200.degree. C. or more. The dyes also exhibit good solubility in solvents commonly employed in processing semiconductor devices, thus permitting the dyes to be incorporated in photoresist elements in an amount sufficient to prevent resist image distortion caused by backscattered or reflected light.

REFERENCES:
patent: Re30303 (1980-06-01), Weber, II et al.
patent: 4370405 (1983-01-01), O'Toole et al.
patent: 4575480 (1986-03-01), Kotani et al.
patent: 4618565 (1986-10-01), White et al.
patent: 4626492 (1986-12-01), Eilbeck
patent: 4668606 (1987-05-01), DoMinh et al.
Carlson, B., et al., "Control of One-Micron Lines in Integrated Circuits," Proceedings of the Microelectronics Seminar, 1980, pp. 109-113.

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