Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1989-12-20
1994-12-27
Nguyen, Viet Q.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257280, 257282, 257285, 257286, 257287, H01L 2980, H01L 21265
Patent
active
053768124
ABSTRACT:
A method for producing a Schottky barrier gate type field effect transistor includes producing a low concentration active region at a desired position of a semi-insulating compound semiconductor substrate and producing a gate electrode comprising refractory metal on the active region, producing a first insulating film and etching the same thereby to produce first side wall assist films comprising the first insulating film at both side walls of the gate electrode, removing one of the first side wall assist films at the side where a source electrode is to be produced, depositing a second insulating film to the thickness less than that of the first insulating film, etching the second insulating film thereby to produce a second side wall assist film having narrower width than that of the first side wall assist film at the side wall of the gate electrode where the source electrode is to be produced, and conducting ion implantation using the first and second side wall assist films and the gate electrode as a mask thereby to produce high concentration active regions in asymmetrical configurations at sides of the gate electrode.
REFERENCES:
patent: 4356623 (1989-07-01), Hunter
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patent: 4803526 (1989-02-01), Terada et al.
patent: 4863879 (1989-09-01), Kwok
patent: 4962054 (1990-10-01), Shikata
Geissberger et al., "A New Refractory . . . MMIC's," IEEE Transactions on Electron Devices, vol. 35, No. 5, May 1988, pp. 615-622.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Viet Q.
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