Semiconductor device

Details Semiconductor device Semiconductor device

1987-07-22

1989-09-12

Edlow, Martin H.

357 4, H01L 3300

Patent

active

048664898

ABSTRACT:
A semiconductor device in which a strained-layer of super-lattice composed of two or more group II-IV semiconductors grown on an epitaxial growth layer formed on a surface of a semiconductor substrate. Since the strained-layer of super-lattice composed of two or more group II-VI semiconductors is present in the heterojunction of the heterostructure, it is possible to form a favorable heterostructure seminconductor layer, inhibiting the adverse effects of lattice mismatch.

REFERENCES:
patent: 4525687 (1985-06-01), Chemla
Kobayashi et al., Appl. Phys. Lett., 48, 12 Jan. 1986, pp. 296-297.

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