Method of heat-treating a semiconductor wafer to determine proce

Details Method of heat-treating a semiconductor wafer to determine proce Method of heat-treating a semiconductor wafer to determine proce

1993-01-19

1994-12-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437247, 148DIG3, H01L 2131

Patent

active

053765923

ABSTRACT:
A method of heat-treating a semiconductor wafer comprises: heat-treating a semiconductor wafer in an atmosphere of an inert gas which does not absorb infrared rays in a specific infrared region to determine heat-treating conditions that heat the semiconductor wafer in a desired temperature profile; and heat-treating a semiconductor wafer in an atmosphere of a process gas according to the previously determined heat-treating conditions. Since the inert gas used in predetermining the heat-treating conditions does not absorb infrared radiation in the specific infrared region corresponding to the infrared absorption range of the process gas, the temperature of the semiconductor wafer can be accurately measured by a pyrometer to determine the heat-treating conditions. In the practical heat treatment of a semiconductor wafer, the temperature of a semiconductor wafer can be accurately controlled according to the predetermined heat-treating conditions.

REFERENCES:
patent: 4214919 (1980-07-01), Young
patent: 4784975 (1988-11-01), Hofmann et al.
patent: 5210056 (1993-05-01), Pong et al.

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