Method of fabricating high voltage complementary metal oxide sem

Details Method of fabricating high voltage complementary metal oxide sem Method of fabricating high voltage complementary metal oxide sem

1994-01-25

1994-12-27

Thomas, Tom

Fishing, trapping, and vermin destroying

437 34, 437 56, 437 57, 148DIG126, H01L 2170

Patent

active

053765680

ABSTRACT:
A method for manufacturing CMOS transistors for integrated circuits which have metal gates and heavily doped source and drain electrode regions, thereby improving their resisting capability to a high voltage while reducing cycle time for manufacture. As a result, the performance of the transistors is improved and the cost of manufacture is reduced.

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patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5169796 (1992-12-01), Murray et al.
patent: 5242841 (1993-09-01), Smayling et al.

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