Bipolar gate charge coupled device with clocked virtual phase

Details Bipolar gate charge coupled device with clocked virtual phase Bipolar gate charge coupled device with clocked virtual phase

1995-03-09

1996-03-26

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257222, 257224, 257247, 257248, 377 61, H01L 29765, H01L 27148, G11C 1928

Patent

active

055023185

ABSTRACT:
The charge coupled device cell has a semiconductor layer 20 of a first conductivity type, a buried channel 22 of a second conductivity type on the semiconductor layer 20, a first virtual gate 24 in the buried channel 22, the first virtual gate is switched between at least two potential levels, and a first bipolar gate 42 in the buried channel 22 adjacent the first virtual gate 24.

REFERENCES:
patent: 4032952 (1977-06-01), Ohba et al.
patent: 4151539 (1979-04-01), Barron et al.
patent: 4229752 (1980-10-01), Hynecek
patent: 4300151 (1981-11-01), Nishizawa
patent: 4612521 (1986-09-01), Kleestra et al.
patent: 4779124 (1988-10-01), Hynecek
patent: 4814844 (1989-03-01), Bluzer
patent: 5001530 (1991-03-01), Kurianski et al.
patent: 5151380 (1992-09-01), Hynecek
patent: 5402459 (1995-03-01), Hynecek

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