Process for formation of capacitor for DRAM cell

Details Process for formation of capacitor for DRAM cell Process for formation of capacitor for DRAM cell

1995-04-12

1996-03-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 218242

Patent

active

055019994

ABSTRACT:
A DRAM cell and a process for formation of a capacitor of a DRAM cell. The present invention provides a lower plate electrode consisting of a first conductive layer formed upon a first inter-layer insulating layer, the first inter-layer insulating layer covering the cell region except a contact hole portion; a capacitor dielectric layer formed on the surface of the lower plate electrode; a capacitor lower node electrode consisting of a second conductive layer formed on the dielectric layer and contacting with the source of a pass transistor; a bit line layer disposed upon a second insulating layer and connected to the drain region of the pass transistor through the second inter-layer insulating layer (disposed upon the lower node electrode); a capacitor upper node electrode consisting of a third conductive layer and connected to the capacitor lower node electrode after passing through the second inter-layer insulating layer and through a fourth insulating layer (disposed upon the bit line layer); a capacitor dielectric layer formed upon the capacitor upper node electrode; and a capacitor upper plate electrode consisting of a fourth conductive layer formed on the dielectric layer.

REFERENCES:
patent: 5006481 (1991-04-01), Chan et al.
patent: 5114873 (1992-05-01), Kim et al.
patent: 5162249 (1992-11-01), Kim
patent: 5227322 (1993-07-01), Ko et al.
patent: 5270238 (1993-12-01), Kim

Affiliated with

Also associated with

Rating

Process for formation of capacitor for DRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for formation of capacitor for DRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for formation of capacitor for DRAM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-915337