Fishing – trapping – and vermin destroying
Patent
1994-09-27
1996-03-26
Fourson, George
Fishing, trapping, and vermin destroying
437162, 437186, 437189, 437191, 148DIG10, 148DIG11, 257588, 257591, 257592, 257593, 257565, 257585, 257558, 257559, H01L 21265
Patent
active
055019927
ABSTRACT:
A ring-shaped emitter region is formed either in a region a little toward an inner periphery or in a region a little toward an outer periphery in an upper layer portion of a ring-shaped base region of a bipolar transistor. A conductive layer is laminated through an insulating layer in a region surrounded by the ring-shaped emitter region provided a little toward the inner periphery of the base region, a conductive side wall is formed on the sides of the conductive layer and the insulating layer, and the ring-shaped emitter region and the conductive layer are connected through the conductive side wall. A metallic emitter electrode is connected to the conductive layer. On the other hand, in a region surrounded by the ring-shaped base region in which the ring-shaped emitter region is formed a little toward the outer periphery, a conductive layer is laminated through an insulating layer, a conductive side wall is formed on the sides of the conductive layer and the insulating layer, and the ring-shaped base region and the conductive layer are connected through the conductive side wall. A metallic base electrode is connected to the conductive layer. Since an emitter region and a collector region have the same conduction type in a bipolar transistor, such a bipolar transistor that has a construction in which the emitter described above is used as a collector is also available.
REFERENCES:
patent: 5070030 (1991-12-01), Ikeda et al.
patent: 5204277 (1993-04-01), Somero et al.
patent: 5258642 (1993-11-01), Nakamura
patent: 5389552 (1995-02-01), Iranmanesh
patent: 5409845 (1995-04-01), Robinson et al.
"Bipolar Technology for a 0.5-Micron-Wide Base Transistor With an ECL Gate Delay of 21.5 Picoseconds," S. Nakamura et al., International Electron Devices Meeting 1992, IEEE, pp. 445-448.
Fourson George
Fujitsu Limited
Pham Long
LandOfFree
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