Interconnection structure for polycrystalline silicon resistor a

Details Interconnection structure for polycrystalline silicon resistor a Interconnection structure for polycrystalline silicon resistor a

1983-09-21

1985-07-09

James, Andrew J.

357 59, 357 67, 357 71, 357 50, H01L 2702, H01L 2904, H01L 2348

Patent

active

045285829

ABSTRACT:
End portions of a polycrystalline silicon resistor are bonded to conductive members of silicon of low resistivity through a silicide of a suitable metal such as platinum.

REFERENCES:
patent: 3570114 (1971-03-01), Bean
patent: 3597834 (1971-08-01), Lathrop
patent: 3617824 (1971-11-01), Shinoda et al.
patent: 3777364 (1973-12-01), Schinella et al.
patent: 3900344 (1975-08-01), Magdo
patent: 3939047 (1976-02-01), Tsunemitsu
patent: 4329706 (1982-05-01), Crauder et al.
patent: 4370798 (1983-02-01), Lien et al.
IBM Tech. Disclosure Bulletin, vol. 23, #6, Nov. 1980, by Rideout, pp. 2563-2566.
IBM Technical Disclosure Bulletin, vol. 21, #12, 5/79, "Fabrication of Vias in a Multilayered Metalization in LSI Tech.".
IBM Technical Disclosure Bulletin, vol. 17, #6, 11/74, "Nickel-Silicide Barriers to Improve Ohmic Contacts".
Journal of Vacuum Science Tech., vol. 17, #4, Jul., 80, "General Physical Properties-Selection of Silicides", p. 776.

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