Coherent light generators – Particular active media – Semiconductor
Patent
1991-06-05
1992-10-27
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 46, H01S 319
Patent
active
051596032
ABSTRACT:
A surface emitting laser or SEL having a pair of vertical oscillator mirrors and a pair of integrated 45.degree. beam deflectors etched in a pair of parallel grooves in a broad-area multilayered wafer by tilted ion beam etching. Each SEL has high output power, low threshold current density, relatively high efficiency, and is compatible with large scale optoelectronic integrated circuit technology. One embodiment includes a lattice matched, unstrained AlGaAs/GaAs single quantum well (SQW) optical cavity in a graded index separate confinement heterostructure (GRINSCH). A second embodiment is a 945 nm lattice-mismatched or pseudomorphic In.sub.0.15 Ga.sub.0.85 As/AlGaAs SQW optical cavity SEL in a GRINSCH configuration in which the lattice mismatch is accommodated by elastic deformation of the lattice. Strain-induced reduction of valence band non-parabolicity and effective density states permits operation with a relatively low threshold current and improved spectral and dynamic properties. The GaAs substrate is transpar
REFERENCES:
patent: 3824493 (1974-07-01), Hakki
patent: 4468850 (1984-09-01), Liau et al.
patent: 4523317 (1985-06-01), Botez
patent: 4523318 (1985-06-01), Connolly et al.
patent: 4636821 (1987-01-01), Yanase et al.
patent: 4660207 (1987-04-01), Svilans
patent: 4675876 (1987-06-01), Svilans
patent: 4675877 (1987-06-01), Svilans
patent: 4677629 (1987-06-01), Lesh
patent: 4718070 (1988-01-01), Liau et al.
patent: 4755015 (1988-07-01), Uno et al.
patent: 4760578 (1988-07-01), Oshima et al.
patent: 4777148 (1988-10-01), Liau et al.
patent: 4784722 (1988-11-01), Liau et al.
patent: 4796269 (1989-01-01), De Freez et al.
patent: 4797892 (1989-01-01), De Freeze et al.
patent: 4807238 (1989-02-01), Yokomori
patent: 4811348 (1989-03-01), Arimoto et al.
patent: 4873696 (1989-10-01), Coldren et al.
patent: 4881236 (1989-11-01), Brueck et al.
patent: 4881237 (1989-11-01), Donnelly
patent: 4894833 (1990-11-01), Carlin
patent: 4894840 (1990-11-01), Liau et al.
patent: 4901327 (1990-02-01), Bradley
patent: 4906839 (1990-03-01), Lee
patent: 4935939 (1990-06-01), Liau et al.
patent: 4942366 (1990-07-01), Toda
patent: 4943782 (1990-07-01), Stephens et al.
patent: 4943970 (1990-07-01), Bradley
patent: 4949350 (1990-08-01), Jewell et al.
patent: 4949351 (1990-08-01), Imanaka
patent: 4950622 (1990-08-01), Kwon et al.
patent: 4952019 (1990-08-01), Evans et al.
patent: 4956844 (1990-09-01), Goodhue et al.
Yang et al., "Surface-Emitting GaAlAs/GaAs Laser with Etched Mirrors", Elec. Lett., vol. 22, No. 8, 10th Apr. 1986, pp. 438-439.
Yang, et al., "Surface-Emitting GaAlAs/GaAs linear laser arrays with etched mirrors", Appl. Phys. Lett., 49(18), 3 Nov. 1986, pp. 1138-1139.
Shieh et al., "Low threshold Current Surface Emitting AlGaAs/GaAs Laser with 45.degree. Metallised Reflector", Elec. Lett., vol. 24, No. 6, 17th Mar. 1988, pp. 343-344.
Kim et al., "High-Power AlGaAs/GaAs Single Quantum Well 45.degree.-Beam-Deflecting Surface-Emitting Lasers", IEEE Leos Conference, Abstract submitted Jun. 8, 1990, 2 pages.
Kim et al., "45.degree. Beam Deflecting Single Quantum Well Surface-Emitting Lasers for Optoelectronic Neural Networks", IEEE Nov. 4-9, 1990 Leos Conference Proceedings, 2 pages.
Kim et al., "High-Power AlGaAs/GaAs single quantum well surface-emitting lasers with integrated 45.degree. beam deflectors", Appl. Phys. Lett. 57(20), 12 Nov. 1990, pp. 2048-2050.
Kim et al., "Pseudomorphic In Ga.sub.l-y As/GaAs/Al.sub.x Ga.sub.l-x As single quantum well surface-emitting lasers with integrated 45.degree. beam deflectors", Appl. Phys. Lett. 58(1), 7 Jan. 1991, pp. 7-9.
Epps Georgia Y.
Jones Thomas H.
Kusmiss John H.
Miller Guy M.
United States of America as represented by the Administrator, Na
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