Manufacturing a low voltage n-channel MOSFET device

Details Manufacturing a low voltage n-channel MOSFET device Manufacturing a low voltage n-channel MOSFET device

1977-04-01

1978-08-08

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148187, 357 42, B01J 1700

Patent

active

041047842

ABSTRACT:
A novel MOSFET circuit and method of manufacture utilizing a double ion implant process for manufacturing a low voltage high performance n-channel device that includes an enhancement transistor inverter combined with a depletion transistor load. The process starts with high resistivity material and uses a first ion implant process to dope the field region and to give the required threshold voltage for an enhancement device. A second ion implant is used to dope the channel region for the depletion device.

REFERENCES:
patent: 3447046 (1969-05-01), Cricchi
patent: 3653978 (1972-04-01), Robinson
patent: 3867204 (1975-02-01), Rutledge
patent: 3886003 (1975-05-01), Takagi
patent: 4062699 (1977-12-01), Armstrong
patent: 4075754 (1978-02-01), Cook

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